Part Number Hot Search : 
9L71I MORGYE LBN09016 MP2162A TA115 FS75R12K WRC20MS 00202
Product Description
Full Text Search

PM1200HCE330-1 - 1200 A, 3300 V, N-CHANNEL IGBT INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE

PM1200HCE330-1_1072178.PDF Datasheet


 Full text search : 1200 A, 3300 V, N-CHANNEL IGBT INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE


 Related Part Number
PART Description Maker
CM1200HG-66H 1200 A, 3300 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE INSULATED TYPE
POWEREX INC
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
APT150GN120JDQ4 Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; IC (A): 99; 215 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
Microsemi, Corp.
Microsemi Corporation
HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N1 1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200V/ NPT Series N-Channel IGBT
35A, 1200V, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
MGY25N120_D ON1934 MGY25N120 Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
From old datasheet system
ONSEMI[ON Semiconductor]
CM75DU-24H Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
2MBI75S 2MBI75S-120 IGBT MODULE ( S-Series ) 2-Pack IGBT 1200V 2X75A IGBT模块S系列,包IGBT200X75A
5-Pin, Multiple-Input, Programmable Reset ICs 100 A, 1200 V, N-CHANNEL IGBT
http://
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
MII75-12A3 MDI75-12A3 MID75-12A3 IGBT Modules - Short Circuit SOA Capability Square RBSOA 90 A, 1200 V, N-CHANNEL IGBT
IGBT Modules: Boost Configurated IGBT Modules
IXYS, Corp.
IXYS[IXYS Corporation]
BSM100GB120DN2K BSM50GB120DN2 BSM50GAL120DN2 100 A, 1200 V, N-CHANNEL IGBT
50 A, 1200 V, N-CHANNEL IGBT

APT75GN120J Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
Microsemi, Corp.
CM400DY-66H HIGH POWER SWITCHING USE INSULATED TYPE 400 A, 3300 V, N-CHANNEL IGBT
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
SKM145GB124DN SKM145GAL124DN Low Loss IGBT Modules 190 A, 1200 V, N-CHANNEL IGBT
SEMIKRON[Semikron International]
APTGF100A120TG Phase leg NPT IGBT Power Module 135 A, 1200 V, N-CHANNEL IGBT
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
 
 Related keyword From Full Text Search System
PM1200HCE330-1 datasheet | даташит PM1200HCE330-1 ic在线 PM1200HCE330-1 Integrated PM1200HCE330-1 gate threshold PM1200HCE330-1 applications
PM1200HCE330-1 Protect PM1200HCE330-1 Gate PM1200HCE330-1 molex PM1200HCE330-1 接腳圖 PM1200HCE330-1 filetype:pdf
 

 

Price & Availability of PM1200HCE330-1

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.16872596740723